Samsung Electronics Co., Ltd.

Seong-yong Park

Sang-jun Choi

Ki-Hong Kim

Young-eal Kim

Woo-young Yang

A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Growing community of inventors

Yongin-si, South Korea

Seong-yong Park