Electronics and Telecommunications Research Institute

Seong Wook Yoo

Sang Gi Kim

Yong Sun Yoon

Jong Moon Park

Bo Woo Kim

Jin Gun Koo

Kun Sik Park

Byung Won Lim

Yoon Kyu Bae

Jin Ho Lee

Yil Suk Yang

Gyungock Kim

Jongdae Kim

Sahnggi Park

Jong-Moon Park

Jin-Gun Koo

Kyoung Il Na

Jin Yeong Kang

Kun Sik Pakr

Ju Wook Lee

Boo Woo Kim

An optical device module includes a substrate, an interlayer insulating layer on the substrate, an optical waveguide on the interlayer insulating layer, an optical device on the optical waveguide, and a prism disposed between the optical device and the optical waveguide. The prism has a refractive index greater than a refractive index of the optical waveguide.

Optical device module and optical communication network system using the same

Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

Semiconductor device and method of fabricating the same

A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.

Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof

Provided is a wafer exposure apparatus used in a semiconductor device manufacturing process, the exposure apparatus including: a reflective mirror for reflecting light provided from a light source; an optical path changer for changing a path of the light provided from the reflective mirror; first mirrors installed at both sides of the optical path changer to change the path of the light; second mirrors installed at both sides of a material to change the path of the light; and third mirrors installed at both sides of a mask to enter the light reflected by the first mirrors to the mask and to enter the light passed through the mask into the second mirrors, whereby it is possible to continuously expose one surface, both surfaces or a specific surface of a wafer in a state that the wafer is once aligned.

Exposure apparatus

Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Semiconductor photodetector for detecting light having a wavelength in the ultraviolet blue ranges

Provided is a method of fabricating a T-type gate including the steps of: forming a first photoresist layer, a blocking layer and a second photoresist layer to a predetermined thickness on a substrate, respectively; forming a body pattern of a T-type gate on the second photoresist layer and the blocking layer; exposing a predetermined portion of the second photoresist layer to form a head pattern of the T-type gate, and performing a heat treatment process to generate cross linking at a predetermined region of the second photoresist layer except for the head pattern of the T-type gate; performing an exposure process on an entire surface of the resultant structure, and then removing the exposed portion; and forming a metal layer of a predetermined thickness on an entire surface of the resultant structure, and then removing the first photoresist layer, the blocking layer, the predetermined region of the second photoresist layer in which the cross linking are generated, and the metal layer, whereby it is possible to readily perform a compound semiconductor device manufacturing process, and to reduce manufacturing cost by means of the increase of manufacturing yield and the simplification of manufacturing processes.

Method of fabricating T-type gate

Growing community of inventors

Daegu, South Korea

Seong Wook Yoo