Skhynix Inc.

Seong Uk Kim

Myung Su Kim

Kang Woo Park

Beom Seok Hah

Provided herein are a memory system and a method of programming the same. The memory system may include a memory device including memory cells for storing data and a plurality of latches for storing code values indicating the data. The memory device may be configured to program data into each of the memory cells, store an original code value indicating the data in the plurality of latches, and change the original code value stored in the plurality of latches to an erase code value in response to a verification pass, and a memory controller configured to output, to the memory device, a suspend command for suspending at least the programming in response to detecting a sudden power-off and a recovery command for restoring a code value changed to the erase code value.

Memory system restoring changed data and method of programming the same

A memory device includes a system block for storing test information and includes a data block including memory cells connected to a plurality of low bank column lines and a plurality of high bank column lines. The memory device also includes a column repair controller configured to detect, based on the test information, a concurrent repair column line in which a low bank column line among the plurality of low bank column lines and a high bank column line the plurality of high bank column lines corresponding to the same column address are concurrent repaired.

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Icheon-si Gyeonggi-do, South Korea

Seong Uk Kim