Korea Photonics Technology Institute

Samsung Electronics Co., Ltd.

Seong-Ran Jeon

Seung-hwan Kim

Jong-Hyeob Baek

Sang-Mook Kim

Jae-soong Lee

Seung-Jae Lee

Tae Hoon Chung

Sung-Chul Choi

Young-ho Song

A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.

Nitride semiconductor light-emitting device, and method for manufacturing same

Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes.

Devices having nitride quantum dot and methods of manufacturing the same

Growing community of inventors

Gwangju, South Korea

Seong-Ran Jeon