Amkor Technology, Inc.

Amkor Technology Singapore Holding Pte. Ltd.

Anam Semiconductor Inc.

Amkor Electronics, Inc.

Anam Industrial Co., Ltd.

Seong Min Seo

Jong Sik Paek

Doo Hyun Park

Won Chul Do

Ji Hun Lee

Pil Je Sung

Seo Yeon Ahn

Choon Heung Lee

Yong Min Song

Jin Young Kim

Glenn A Rinne

Ju Hoon Yoon

Young Suk Chung

Wang Gu Lee

Sung Geun Kang

Eun Young Lee

Jae Hak Yee

Jae Hun Ku

In Bae Park

Ho Cheol Jang

Do Hyung Kim

Yoon Joo Kim

Sung Su Park

Young Rae Kim

Jin Hee Park

SungGeun Kang

Chang Min Lee

Seok Woo Yun

Suck Ju Jang

Hui Tae Kim

Jae Hwan Song

Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.

Semiconductor device using EMC wafer support system and fabricating method thereof

A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Semiconductor device and manufacturing method thereof

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

A semiconductor device with plated pillars and leads is disclosed and may include a semiconductor die comprising a conductive pillar, a conductive lead electrically coupled to the conductive pillar, a metal plating layer covering the conductive lead and conductive pillar, and an encapsulant material encapsulating the semiconductor die and at least a portion of the plating layer. The pillar, lead, and plating layer may comprise copper, for example. The plating layer may fill a gap between the pillar and the lead. A portion of the metal plating layer may, for example, comprise an external lead. The metal plating layer may cover a side surface of the pillar and a top surface, side surface, and at least a portion of a bottom surface of the lead. The metal plating layer may cover side and bottom surfaces of the pillar and top, side, and at least a portion of bottom surfaces of the conductive lead.

Semiconductor device with plated pillars and leads

In one embodiment, an electronic device package structure includes an electronic die having conductive pads on one surface. The one surface is further attached to at least one lead. A conductive layer covers at least one conductive pad and at least portion of the lead thereby electrically connecting the lead to the conductive pad.

Electronic device package structure and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Seong Min Seo