Magnachip Semiconductor, Inc.

Seong Min Cho

Francois Hebert

Yon Sup Pang

Ju Ho Kim

Yu Shin Ryu

Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of the substrate to form a low concentration doping region (LDD region) in the body region without a mask, forming a spacer at a side wall of the gate electrode, and implementing a high concentration ion implantation to form a high concentration source region and a high concentration drain region around the LDD region. According to the examples, devices have favorable electrical characteristics and at the same time, manufacturing costs are reduced. Since, when forming high concentration source region and drain regions, tilt and rotation co-implants are applied, an LDD masking step is potentially omitted.

Low-cost semiconductor device manufacturing method

The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. The manufacturing cost of the vertical bipolar junction transistor can be lowered and a current gain can be elevated using a low-cost BCD process.

Growing community of inventors

Cheongju-si, South Korea

Seong Min Cho