Korea Institute of Science and Technology

Snur & Db Foundation

Global Frontier Center for Multiscale Energy Systems

Seong Keun Kim

Chong Yun Kang

Ji-Won Choi

Jin Sang Kim

Seung Hyub Baek

Sang Tae Kim

Jun Hee Kang

Hyun-Cheol Song

Jong Woo Lee

Eun Hak Lim

Jung Eun Lee

Seon Jin Hwang

Hyun Seok Lee

Il Seung Yang, Ii

Ji Won Choi

Yong-Won Song

Seok Jin Yoon

Sangtae Kim

Seung Bum Park

Hyunjung Yi

Doo Seok Jeong

Chong-Yun Kang

Hyun Cheol Song

Christopher W Bielawski

Il Seung Yang

Jin-Sang Kim

Seung-Hyub Baek

Young-Shin Lee

Beomjin Kwon

Woo-Suk Jung

Eric S Larsen

Eun Ha Kim

Won Jae Lee

Seung Yang, Ii

Narendra Singh Parmar

Youn-hwan Shin

Jung Joon Pyeon

Woo Chui Lee

Jung Hwan Yum

Cheol Jin Cho

Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

Self-resonance tuning piezoelectric energy with broadband frequency

Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

Smart wearable lens mounted with all-solid-state thin film secondary battery and method for manufacturing the same

Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:SiN&#x2003;&#x2003;[Chemical Formula 1]

Transparent anode thin film comprising a transparent anode active material, lithium thin film secondary battery, and the method for manufacturing the same

The present invention provides a water-soluble fluorescent compound of resveratrone 6-O-&#x3b2;-glucoside [(E)-4-(8-hydroxy-6-(((2S,3R,4S,5S,6R)-3,4,5-trihydroxy-6-(hydroxymethyl)tetrahydro-2H-pyran-2-yl)oxy)naphthalen-2-yl)but-3-en-2-one] and its derivatives of Formula I which have at least one water-soluble substituent, and a method for preparing the same by a photochemical reaction of resveratrol 3-O-&#x3b2;-glucoside and its derivatives of having Formula 3 which are not fluorescent. Said new water-soluble fluorescent compounds has single-photon absorptive characteristics and/or two-photon absorptive characteristics as well as no or little toxicity, and can be usefully utilized in fields that requires water-soluble fluorescent characteristics (diagnosis, fluorescent probe, in vivo imaging, display, etc.).

Water-soluble fluorescence compound and method for preparing the same

Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BeMO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,BeMO,

Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer

A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

Method of manufacturing electrode layer, method of manufacturing capacitor using the same, capacitor, and memory device including the same

Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

Self-resonance tuning piezoelectric energy harvester with broadband operation frequency

The present invention provides a fluorescent resveratrone [(E)-4-(6,8-dihydroxynaphthalen-2-yl)but-3-en-2-one] and its derivatives having Formula 1 and a method for preparing the same by a photochemical reaction of resveratrol and its derivatives which are not fluorescent having Formula 7 or Formula 8. The new fluorescent compounds of the present invention has single-photon absorptive characteristics and/or two-photon absorptive characteristics as well as no or little toxicity according to a cytotoxicity test and can be usefully utilized in the field of organic fluorescent element, display element, spectrometer, two-photon absorptive storing device, laser micro processing apparatus, photo dynamic therapy apparatus and the like.

High efficiency fluorescent compound and method for preparing the same

The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same

Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by yand yof Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein 

Curved piezoelectric device

A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).

Capacitor for semiconductor memory element and method for manufacturing the same

The present invention provides a water-soluble fluorescent compound of resveratrone 6-O-&#x3b2;-glucoside [(E)-4-(8-hydroxy-6-(((2S,3R,4S,5S,6R)-3,4,5-trihydroxy-6-(hydroxymethyl)tetrahydro-2H-pyran-2-yl)oxy)naphthalen-2-yl)but-3-en-2-one] and its derivatives of Formula 1 which have at least one water-soluble substituent, and a method for preparing the same by a photochemical reaction of resveratrol 3-O-&#x3b2;-glucoside and its derivatives of having Formula 3 which are not fluorescent. Said new water-soluble fluorescent compounds has single-photon absorptive characteristics and/or two-photon absorptive characteristics as well as no or little toxicity, and can be usefully utilized in fields that requires water-soluble fluorescent characteristics (diagnosis, fluorescent probe, in vivo imaging, display, etc.).

Growing community of inventors

Seoul, South Korea

Seong Keun Kim