Samsung Electronics Co., Ltd.

Sungkyunkwan University

Seong-jun Jung

Insu Jeon

Hwansoo Suh

Qinke Wu

Young-jae Song

Sung-kyu Jang

Sung-joo Lee

Min Wang

Min-woo Kim

Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure

According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

Method of forming multilayer graphene structure

Growing community of inventors

Suwon-si, South Korea

Seong-jun Jung