Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Yonsei University

Seong-Jun Jeong

Haeng Deog Koh

Mi-Jeong Kim

Youn Jung Park

Ji-Eun Kim

Seung-Ho Nam

Moon-Gyu Lee

Su-Mi Lee

In Taek Han

Sang-ouk Kim

Jae-Ho You

June Huh

Bong-Hoon Kim

A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r, and the inner apex having a second curvature radius r, respectively, and the width of the patterning area W, the first curvature radius rand the second curvature radius r, satisfy Inequation 1: 

Method of patterning block copolymer layer and patterned structure

A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period &#x3bb;in the trench by the annealing.

Methods of patterning block copolymer layers

According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.

Method of manufacturing nano-structure and method of manufacturing a pattern using the method

Growing community of inventors

Ulsan-si, South Korea

Seong-Jun Jeong