Gwangju Institute of Science and Technology

Intellectual Discovery Co., Ltd.

Kwangju Institute of Science and Technology

Seong-Ju Park

Heung Cho Ko

Seok Ho Kim

Young Kyu Hwang

Hun Soo Jang

Jongwon Yoon

Su Ok Yun

Hyun-A Cho

Byeong-Il Noh

Jaeyi Chun

Youngchul Leem

Jae-Joon Kim

Yong Seok Choi

Jang-Won Kang

Byeong Hyeok Kim

Young-Chul Leem

Dae-Kue Hwang

Min-Ki Kwon

Min-Suk Oh

Yong-Seok Choi

Kyoung-Kook Kim

Sang-Jun Lee

Sang-Hyun Hong

Sang-Jo Kim

Disclosed are a method of fabricating a light emitting diode and a light emitting diode fabricated by the same. In the method of fabricating a light emitting diode, a convex-concave pattern is formed on a light emitting structure and a nanosphere layer is transferred to the convex-concave pattern, followed by dry etching to form a stepped surface structure having a plurality of nanobumps arranged on a surface thereof, and chemical coating to reduce surface energy of the stepped surface structure. The method can easily form a stepped surface structure having a plurality of nanobumps on a surface of a convex-concave pattern periodically arranged through nanosphere lithography and dry etching, thereby simplifying the fabrication process while improving production yield.

Method of fabricating light emitting diode and light emitting diode manufactured thereby

The present disclosure provides a method for fabricating a substrate for transfer printing using a concave-convex structure and a substrate for transfer printing fabricated thereby. The method includes preparing a handling substrate having a concave-convex structure formed thereon; forming a sacrificial layer along the concave-convex structure on the handling substrate; coating a polymer on the handling substrate having the sacrificial layer formed thereon to form a polymer substrate having bumps filling a concave portion of the concave-convex structure; and removing the sacrificial layer from the handling substrate. The substrate for transfer printing includes a handling substrate having a concave-convex structure formed thereon; and a polymer substrate placed on the concave-convex structure and having bumps filling a concave portion of the concave-convex structure of the handling substrate. The present invention allows a process of manufacturing a device to be stably performed on an ultrathin substrate and may secure high degree of alignment and high transfer yield in a transfer printing process.

Method for fabricating transfer printing substrate using concave-convex structure, transfer printing substrate fabricated thereby and application thereof

A light emitting diode including a magnetic structure and a method of fabricating the same are disclosed. The magnetic structure composed of passivation layers and a magnetic layer is disposed inside a luminous structure composed of an active layer and a semiconductor layer. In the light emitting diode, the magnetic structure including the magnetic layer is disposed on a side surface of the active layer to improve recombination rate of charge carriers for light emission by increasing influence of a magnetic field applied to the active layer. In addition, the light emitting diode according to the present invention allows change in position of the magnetic structure including the magnetic layer depending upon an etched shape of the luminous structure, thereby realizing various magnetic field distributions.

Light emitting diode having magnetic structure and method of fabricating the same

The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased.

Nitride semiconductor light emitting device

Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure.

Light emitting diode

Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF, NaF, SrF, or MgF. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.

ZnO film structure and method of forming the same

A method for fabricating a substrate for transfer printing using a concave-convex structure and a substrate for transfer printing fabricated thereby. The method includes preparing a handling substrate having a concave-convex structure formed thereon; forming a sacrificial layer along the concave-convex structure on the handling substrate; coating a polymer on the handling substrate having the sacrificial layer formed thereon to form a polymer substrate having bumps filling a concave portion of the concave-convex structure; and removing the sacrificial layer from the handling substrate. The substrate includes a handling substrate having a concave-convex structure formed thereon; and a polymer substrate placed on the concave-convex structure and having bumps filling a concave portion of the concave-convex structure of the handling substrate. This process of manufacturing provides a device to be stably performed on an ultrathin substrate and may secure high degree of alignment and high transfer yield in a transfer printing process.

Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.

Zinc oxide light emitting diode

Disclosed herein is a method for manufacturing a zinc oxide semiconductor. The method comprises the steps of forming a zinc oxide thin film including a group V element as a dopant on a substrate by using a zinc oxide compound containing a group V element or an oxide thereof, charging the substrate having the zinc oxide thin film formed thereon into a chamber for thermal annealing, and thermal annealing the substrate in the chamber to activate the dopant, thereby changing the zinc oxide thin film exhibiting n-type electrical properties or insulator properties to a zinc oxide thin film exhibiting p-type electrical properties. According to the method, since a zinc oxide thin film exhibiting n-type electrical properties can be easily changed to a zinc oxide thin film exhibiting p-type electrical properties, the provision of holes required for optical devices is facilitated, thereby enabling the development of photoelectric devices such as light-emitting diodes, laser diodes and UV sensors and further extending applicability of the zinc oxide semiconductor.

Growing community of inventors

Gwangju, South Korea

Seong-Ju Park