Electronics and Telecommunications Research Institute

Other

Sk Telecom Company, Ltd.

Rf Window Co., Ltd.

Hwaseung Exwill Co., Ltd.

Rf Windows Co., Ltd

Seong Jae Lee

Moon Gyu Jang

Kyoung Wan Park

Yark Yeon Kim

Jong Heon Yang

Jae Heon Shin

Min Cheol Shin

Wonju Cho

Han Young Yu

Chang Geun Ahn

In Bok Baek

Jong Hyurk Park

Se Hyun Oh

Byoung Chul Park

Myung Sim Jun

Chel Jong Choi

Jihun Oh

Kiju Im

Youl No Lee

Gab Seok Jang

Ki Ju Im

Bong Yong Song

Chan Woo Park

Jeong Tae Kim

Sang Chul Oh

Min Ki Ryu

Woo Seok Cheong

Sung Yool Choi

Jeong Min Lee

Moon Ho Park

Ung Hwan Pi

Doo Young Moon

Mi Hyun Lee

Hyun Su Kang

Young Chun Kim

Chang Geun Anh

Ju Tae Song

Jae Woong Koo

Mi Ja Lee

Hyeong Soo Choi

Tae Woong Kang

Chang Soon Kim

Soon Hwan Yun

Won Ju Cho

Jeong Chul Kim

Disclosed is a shut-off valve installed in an accommodation chamber regulating entry/exit of air. The shut-off valve includes: a body removably disposed in the accommodation chamber and having multiple air passage holes; a valve stem adapted to be moved vertically along a valve stem insertion hole formed in the body; a disc mounted on a disc engagement portion formed at a lower end of the valve stem to open/close at least one of the multiple air passage holes; a rotor disposed on an upper side of the body to vertically move the valve stem, the rotor being provided with an opening/closing indicator to check opening/closing of the shut-off valve outside the accommodation chamber, wherein the accommodation chamber has an upper wall, a lower wall, and a side wall, the body disposed passing through the upper wall and lower wall of the accommodation chamber, and the disc is located outside the accommodation chamber.

Shut-off valve for pneumatic fender

A method is provided for achieving SRAM output characteristics from DRAMs, in which a plurality of DRAMs are arranged connected in parallel to a controller in such a way as to be able to obtain SRAM output characteristics using the DRAMs, comprising a process in which data is output to an external device when a control signal for data reading has been input from the external device, by sequentially repeating a step in which the controller sends a data output state control signal to one DRAM and sends a refresh standby state control signal to the other DRAMs, the data is read and sent to the external device from the DRAM in the output state, and a refresh standby state control signal is sent to the DRAM which was in the output state while an output state control signal is sent to another DRAM and data is read out from the DRAM in the output state, and a step in which the controller sends a control signal for changing the output state to the refresh standby state.

Device and method for achieving SRAM output characteristics from DRAMS

The storage chamber for secondary material applicable to the discharging direction of contents stored in the container consists of body with storage space and inseparable operating section mounted around the globe. If above operating section moves up, opening and closing hole made or formed in the storage space of storage is opened and contents stored in the storage space is dropped and mixed with contents stored in the container. The mixed contents are discharged via a vent mounted on the top of operating section. A vent is not opened until the operating section is opened, and closing section of opening and closing hole is provided so that the opening and closing hole may not be not clogged after being opened.

Cap assembly having storage chamber for secondary material with movable working member

Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Method of manufacturing a Schottky barrier tunnel transistor

Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.

Method of manufacturing semiconductor device

A forward and reverse link automatic power controlled repeater in an apparatus for measuring a path loss between a base-station and a repeater, includes a repeater control part device for controlling a repeater run and for processing forward and reverse gain of the repeater using received information. A mobile communication modem device transfers base-station signal information and base-station power transmission, and provides a wireless connection pathway of the repeater control part. A repeater element management system (EMS) device transfers information extracted from the base-station to the repeater control part and exchanges information with the repeater control part to control a repeater through the modem.

Forward and reverse link automatic power controlled repeater and method

The present invention relates to a Radio Frequency Repeater to prevent oscillation with canceling a feedback interference signal between transmitting and receiving antenna with built-in transmitting and receiving antenna in wireless mobile communication repeater. A radio frequency repeater for canceling a feedback interference signal has a downlink path from a base station to a terminal and an uplink path from a terminal to a base station, and said downlink path and said uplink path is separated and combination by a duplexer.

Radio frequency repeater for cancelling feedback interference signal with built in antenna

Provided is a data storing and reading apparatus for storing and reading data using a nano device with nano-dots dots regularly arranged, comprising a probe movable by a cantilever so as to be placed onto each nano-dot of the nano device, a bias power supply unit for supplying a storing bias voltage and a reading bias voltage between the probe and the nano device, a light beam generator for generating a light beam to detect a position of the probe, a position detector for detecting the light beam reflected from the probe, an amplifier for amplifying an output signal of the position detector, and a detection circuit for reading data stored in the nano-dot using an output signal of the amplifier.

Data storing and reading apparatus for storing data in a nano-device

Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

Schottky barrier tunnel single electron transistor and method of manufacturing the same

An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.

Process of manufacturing an N-type Schottky barrier tunnel transistor

Schottky barrier tunnel transistor and method of manufacturing the same

Provided is a data storage apparatus using current switching in a metal oxide layer. The data storage apparatus includes a substrate; a lower electrode layer disposed on the substrate; a metal oxide layer disposed on the lower electrode layer; a probe tip disposed on the metal oxide layer opposite the lower electrode layer and for scanning a local region of the metal oxide layer in units of nanometer, wherein the probe tip applies a write voltage to the local region of the metal oxide layer so that the resistance of the local region is sharply changed until a resistive state of the local region is switched from a first state to a second state or measures current flowing through the local region according to the resistive state and reads data stored in the local region; a driver for transferring the position of the probe tip to the local region of the metal oxide layer; and a controller for controlling the probe tip and the driver.

Data storage apparatus using current switching in metal oxide layer

Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Method of manufacturing nano size-gap electrode device

Embodies of peripheral a wireless relay system apparatus and method for a multi-path interference removing using by same channel frequency is shown and described, which purpose of the present invention is to overcome extension of service coverage and a dead spot with amplifying same channel frequency, a problem in doing the relay, system wireless relay system was a same frequency interference of RF (Radio Frequency) output is become feedback radiating from tx antenna to rx antenna of the relay system, the wireless relay system apparatus and method effectively eliminates the same frequency interference so that it can ensure an additional system gain and easy to set up relatively to general same frequency relay system.

Multi-path interference removing for wireless relay system apparatus and method using by same channel frequency

A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (&#x2212;) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

Device using ambipolar transport in SB-MOSFET and method for operating the same

Growing community of inventors

Daejeon, South Korea

Seong Jae Lee