Korea Institute of Science and Technology

Hyundai Electric & Energy Systems Co., Ltd.

Seong-Il Kim

Suk-Ki Min

Yong-Tae Kim

Moo Sung Kim

Chun-Keun Kim

Yong Kim

Young-Ho Park

Sun-Il Shim

Young-Hwan Kim

Jung-il Lee

Eun Kyu Kim

Won-Jun Choi

Seung-Pyo Ryu

Soo-Nam Kim

Il-Ki Han

Milovanovic Stefan

Min-Soo Youm

Dujic Drazen

A power converter having a Scott-T transformer includes a direct current to alternating current converter configured to have at least two multilevel converters converting input direct current power to alternating current power, a Scott-T transformer configured to operate in medium frequency of several hundreds of Hz to several tens of kHz, to transform a voltage level of the alternating current power from each of the at least two multilevel converters of the direct current to alternating current converter into three-phase alternating current power, and to output the three-phase alternating current power, and an alternating current to direct current converter configured to convert the three-phase alternating current power from the Scott-T transformer to direct current power.

Power conversion apparatus having Scott-T transformer

A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.

Film sheet for area focusing of sun light and greenhouse provided with the same

Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.

Phase-change RAM containing AIN thermal dissipation layer and TiN electrode

A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.

Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity

A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .

Fabrication method for horizontal direction semiconductor PN junction

A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.

Semiconductor device epitaxial layer lateral growth rate control method

A heater for a chemical vapor deposition equipment includes a meandering heating wire made of either molybdenum or tungsten and having a diameter of about 1 mm. The heating wire is laid on a heater disc that is made of either molybdenum, tungsten or ceramic. The heater disc is holed at its center for receiving a susceptor rotating shaft. A plurality of heating wire fixtures support the heating wire on the heater disc while spacing the heating wire from the heater disc at an interval, thus to prevent the heating wire from directly contacting the heater disc. Each of the heating wire fixtures is provided with a pair of lateral through holes, that is, a heating wire hole formed in an upper section of each fixture and a fixing wire hole formed in a lower section of each fixture. The heater also includes heat resisting plates that are made of either molybdenum or tungsten and placed on the bottom surface and the side surface of the heater disc for preventing side and downward radiation of the heat of the heating wire. The heater heats a substrate to a high temperature not less than 1500.degree. C. and achieves an excellent heating efficiency.

Growing community of inventors

Seoul, South Korea

Seong-Il Kim