Hyundai Mobis Co., Ltd.

Hyundai Autron Company Ltd.

Seong-hwan Yun

Hyuk Woo

Young Joon Kim

Ju Hwan Lee

Tae Young Park

Jeong Mok Ha

Tae Youp Kim

Min Gi Kang

Ju-Hwan Lee

Tae-Young Park

Seon-hyeong Jo

A power semiconductor device includes: a semiconductor layer including a main cell region, a sensor region, and an insulation region between the main cell region and the sensor region; a plurality of power semiconductor transistors disposed on the main cell region; a plurality of current sensor transistors disposed on the sensor region; and a protection resistance layer disposed on the semiconductor layer across the insulation region so that at least a portion of the plurality of power semiconductor transistors and at least a portion of the plurality of current sensor transistors are connected to each other under an abnormal operation condition.

Power semiconductor device

The power semiconductor device includes: a first trench gate and a second trench gate in a stripe shape extending in one direction in parallel and spaced apart from each other in a substrate; a third trench gate in a ladder shape extending in a direction different from the one direction between the first trench gate and the second trench gate in the substrate; a first conductive type body area each disposed between the first trench gate, the second trench gate and the third trench gate, respectively, in the substrate; a pair of first conductive type floating first areas surrounding each of bottom surfaces and at least one side of the first trench gate and the second trench gate in the substrate; and a first conductive type floating second area surrounding a bottom surface of the third trench gate in the substrate.

Power semiconductor device and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Seong-hwan Yun