Samsung Electronics Co., Ltd.

Seong Hwa Park

Jin-Ho Choi

Kwan Heum Lee

Dae Soo Kim

Kyoung Choul Jang

Dong Hyuk Yeom

So Hyun Seo

Jun Kyum Kim

A semiconductor device includes a gate electrode extending in a first direction, on a substrate, first outer spacers extending along side surfaces of the gate electrode, a first active pattern extending in a second direction, which intersects the first direction, to penetrate the gate electrode and the first outer spacers, epitaxial patterns on the first active pattern and on side surfaces of the first outer spacers, second outer spacers between the first outer spacers and the epitaxial patterns and inner spacers between the substrate and the first active pattern and between the gate electrode and the epitaxial patterns, wherein in a cross section that intersects the second direction, at least parts of the second outer spacers are on side surfaces of the first active pattern and side surfaces of the inner spacers.

Semiconductor devices and methods of fabricating the same

Disclosed is an X-ray detector having impact resistance and an X-ray imaging apparatus having the X-ray detector. The X-ray imaging apparatus comprises an X-ray source for generating and irradiating X-rays and an X-ray detector for detecting the X-rays irradiated from the X-ray source. The X-ray detector comprises a main body having a bottom plate including a joining groove, a detector panel arranged inside the main body for converting X-rays irradiated from the X-ray source into electric signals, and a middle block arranged inside the main body to support the detector panel. The middle block has a boss configured to protrude toward the bottom plate of the main body. The boss is inserted into the joining groove. A buffer member is arranged in at least part of the joining groove to prevent the boss from coming into contact with the joining groove.

X-ray detector and X-ray imaging apparatus having the same

Growing community of inventors

Seoul, South Korea

Seong Hwa Park