Samsung Electro-Mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Seong Hun Na

Seung Wook Park

Jae Hyun Jung

Jae Chang Lee

Tah Joon Park

Tae Kyung Lee

Sang Uk Son

Hwa Sun Lee

Tae Sung Jeong

Dae Hun Jeong

Christian Romero

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

Bulk-acoustic resonator module

An acoustic wave device includes an acoustic wave generator, a support portion, a protective member, and at least one element embedded in the protective member. The acoustic wave generator is disposed on a surface of a substrate. The support portion is disposed on the substrate along a circumference of the acoustic wave generator. The protective member is coupled to the support portion and disposed to be spaced apart from the acoustic wave generator by an interval.

Acoustic wave device and method of manufacturing the same

A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a connection member connected an upper surface of the metal pad. A lower end portion of the connection member includes a tapered portion decreasing in a diameter in a direction toward a lower end of the connection member, and an angle between an inclined surface of the tapered portion and the upper surface of the metal pad is 45&#xb0; to 80&#xb0;.

Bulk-acoustic wave resonator

An acoustic wave device includes a substrate, a support portion and a protective member. The substrate has an acoustic wave generator formed on a surface thereof. The support portion is disposed on the surface of the substrate, and includes an accommodating space configured to accommodate the acoustic wave generator. The protective member is coupled to the support portion and disposed to be spaced apart from the acoustic wave generator by a predetermined interval. The protective member is disposed in a seating groove formed in the support portion.

A semiconductor package includes a main substrate, a resonator device disposed above the main substrate, a wiring portion connected to the resonator device, an electrical connection structure connected to the wiring portion and the main substrate, an encapsulant encapsulating the resonator device and the electrical connection structure, and a heat dissipation member bonded to and mounted on the resonator device. A cavity is provided in the resonator device, and is formed between the resonance portion and a resonator device substrate provided in the resonator device.

Semiconductor package

A thin-film package includes: a substrate; a wiring layer disposed on the substrate; a microelectromechanical systems (MEMS) element disposed on a surface of the substrate; a partition wall disposed on the substrate to surround the MEMS element, and formed of a polymer material; a cap forming a cavity with the substrate and the partition wall; and an external connection electrode connected to the wiring layer. The external connection electrode includes at least one inclined portion disposed on at least one inclined surface formed on any one or any combination of any two or more of the substrate, the partition wall, and the cap.

Thin-film type package

An acoustic wave filter device includes a substrate, a filter disposed on the substrate, a wall member disposed on the substrate and surrounding the filter, and a cap member disposed above the wall member and, with the wall member, forming an internal space. The cap member has a curved shape and comprises a first cap member comprising a first material and a second cap member comprising a second material.

Acoustic wave filter device and method of manufacturing the same

A semiconductor package includes a lower package including at least one electronic device, and an antenna unit disposed on an upper surface of the lower package, wherein the antenna unit includes: a ground portion disposed on an upper surface of the lower package, a radiating portion disposed to be spaced apart from the ground portion, and a support portion separating the radiating portion and the ground portion, and at least a portion between the radiating portion and the grounding portion is empty space.

Semiconductor package and manufacturing method thereof

An acoustic wave filter device includes a filter disposed on a substrate, a wall member disposed on the substrate and surrounding the filter, a cap member disposed on the wall member and bounding an internal space with the wall member; and a support member disposed on the cap member. The support member is disposed above the internal space and includes a bump disposed on the cap member.

Acoustic wave filter device

An acoustic wave device includes a substrate comprising one surface on which an acoustic wave generator and at least one ground pad are included; a support component formed of an insulating material and disposed on the substrate along a circumference of the acoustic wave generator; and a shielding member electrically connected to the ground pad and blocking reception or emission of electromagnetic waves at the acoustic wave generator.

Growing community of inventors

Suwon-si, South Korea

Seong Hun Na