Dongbu Hitek Co., Ltd.

Lg Electronics Inc.

Seong Hun Jeong

Ki Jun Yun

Oh Jin Jung

Sang Wook Ryu

Chung Kyung Jung

Sung Wook Joo

Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.

Semiconductor device and method for manufacturing the same

A method for displaying a plurality of windows includes dividing a display screen into first and second display areas. The plurality of windows may be rearranged in the first and second display areas and new windows may be displayed in the first and second display areas based on prior windows displayed.

Method for displaying windows

A method for fabricating an image sensor having a pixel region and a logic region, which includes one of: (1) forming a photodiode in a substrate at the pixel region, (2) forming a first interlayer insulating layer on the substrate, (3) forming a first stop film on the first interlayer insulating layer, (4) forming an insulating film on the first stop film, (5) forming a second stop film on the insulating film, (6) forming at least one trench by selective etching of the second stop film and the insulating film positioned at the pixel region for exposing the first stop film, (7) forming conductive material on the second stop film to fill the at least one trench, and (8) forming a zero wiring layer in the at least one trench by planarizing the conductive material until the second stop film is exposed.

Image sensor and method for fabricating the same

A method of manufacturing a semiconductor device including at least one of the following steps: () Forming a plurality of lower electrodes over a substrate. () Forming a first stop film over the lower electrodes. () Forming a filling layer over the first stop film. () Forming a second stop film over the filling layer. () Forming a first interlayer insulating layer over the second stop film. () Forming a plurality of upper electrodes over the first interlayer insulating layer. () Forming a second interlayer insulating layer over the upper electrodes. () Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. () Forming a contact ball in the cavity.

Growing community of inventors

Gyeonggi-do, South Korea

Seong Hun Jeong