Samsung Electronics Co., Ltd.

Seong-Hun Jang

Jae-hyun Yoo

Jong-Sung Jeon

Jin-Hyun Noh

Myoung-Kyu Park

Su-Tae Kim

Byeong-Ryeol Lee

Young-Mok Kim

Kwan-Jae Song

In-Hack Lee

A semiconductor device having a high and stable operating voltage and a method of manufacturing the same, the semiconductor device including: a substrate having an active region including a channel region; a gate insulating layer that covers a top surface of the active region; a gate electrode that covers the gate insulating layer on the top surface of the active region; buried insulating patterns in the channel region of the active region at a lower side of the gate electrode and spaced apart from a top surface of the substrate; and a pair of source/drain regions in the substrate at both sides of each of the buried insulating patterns and extending from the top surface of the substrate to a level lower than that of each of the buried insulating patterns.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Seong-Hun Jang