Samsung Electronics Co., Ltd.

Seong Heon Kim

Dongjin Yun

Kyu Sik Kim

Sung Heo

Yongsu Kim

Kyung Bae Park

Wenxu Xianyu

Yongsung Kim

Takkyun Ro

Hyangsook Lee

Eunae Cho

Gyeongsu Park

Satoh Ryuichi

Youngnam Kwon

Hyung-Ik Lee

Sunghoon Park

Jaegwan Chung

Yong-Young Park

Woon Jung Paek

Nam Jeong Kim

A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 &#x3a9;/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Conductor and method of manufacturing the same

An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x3c;1), and a combination thereof.

Optoelectronic device, and image sensor and electronic device including the same

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoO(2.58&#x2266;x1&#x3c;3.0), ZnO(1.0&#x2266;x2&#x3c;2.0), TiO(1.5&#x2266;x3&#x3c;2.0), VO(1.5&#x2266;x4&#x3c;2.0), TaO(1.0&#x2266;x5&#x3c;2.5), WO(2.0&#x3c;x6&#x3c;3.0), and a combination thereof.

Growing community of inventors

Seongnam-si, South Korea

Seong Heon Kim