Samsung Electronics Co., Ltd.

Seong-gu Kim

Kyoung-ho Ha

Dong-jae Shin

Sung-Dong Suh

In-sung Joe

Jung-ho Cha

Jin-kwon Bok

Jai-kwang Shin

Dong-hyun Kim

Soo-Haeng Cho

Hyun-il Byun

Yong-hwack Shin

Pil-Kyu Kang

Kyoung-won Na

Ho-Chul Ji

Young-Kyou Park

Han-youl Ryu

Ki-jae Song

Yeoung-kum Kim

Hyeon-ill Um

Yoon-Dong Park

Ki-Nam Kim

Jae-joon Oh

Young Jae Choi

Dong-sik Shim

Chang-bum Lee

Bok-ki Min

Tae-gyu Kim

Dae-lok Bae

Yuri Nikolaevich Tolmachev

Do-In Bae

Yong-woo Hyung

Beom-suk Lee

Kwan-Sik Cho

Chang-gyun Shin

Jung-hye Kim

Young-dong Lee

Yong-sang Park

Ji-Hyun Hur

Andrei-B Petrin

Duanhua Kong

Min-kyung Kim

Su-han Yun

Jong-hyun Yang

Yong-Hwack Shin

The bi-directional optical integrated circuit device array includes a plurality of bi-directional optical integrated circuit unit devices integrated on a substrate and arranged in two-dimensions. Each of the bi-directional optical integrated circuit unit devices includes a single wavelength laser light source integrated on the substrate, a bi-directional optical device integrated on the substrate and optically connected to the laser light source, and an antenna integrated on the substrate and optically connected to the bi-directional optical device.

Optical integrated circuit device array having bi-directional characteristics and optical system using the same

A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

Semiconductor laser device and method of manufacturing the same

Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

Hybrid silicon lasers on bulk silicon substrates

An optical phased array (OPA) may be included in a light detection and ranging (LiDAR) system and may be configured to perform beam steering. The OPA may include a cascading structure of splitters configured to enable a branch operation to be performed M times. Each splitter may split an input optical signal in a ratio of 1:1 and output the split input optical signal. The OPA may include a plurality of sets of first phase shifters (PSs), each set of first PSs located exclusively on one output end of a separate splitter, each set of first PSs including a particular quantity of first PSs based on a branch position at which the separate splitter is located. The OPA may be included in a LiDAR system that is further included in a vehicle that is configured to enable navigation of the vehicle, including autonomous navigation, through an environment.

Optical phased array (OPA)

An optical transmitter includes photonic integrated circuits configured to respectively output optical transmission signals in different wavelength ranges. A photonic integrated circuit may include emitters configured to emit beams having different wavelengths; drivers configured to respectively provide power to the emitters, and a wavelength division multiplexer configured to transmit the beams emitted by the emitters. A photonic integrated circuit may include a switch device that controls the drivers, and light detectors configured to detect intensities of the beams emitted from the emitters. The switch device may selectively operate at least one driver of the plurality of drivers based on information associated with intensities of the beams. The switch device may selectively operate a driver connected to an emitter, based on a determination that an intensity of a beam emitted by another emitter is less than a threshold intensity value.

Optical transmitters including photonic integrated circuit

An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.

Optical device and method of manufacturing the same

An optical apparatus includes an optical waveguide located on a substrate and including a guiding portion and a taper portion, and a grating pattern located on the substrate. The grating pattern includes a plurality of low refractive index portions and a plurality of high refractive index portions, which are alternately arranged in a first direction parallel to a top surface of the substrate. Each of the plurality of high refractive index portions includes a curved inner sidewall and a curved outer sidewall having curvatures defined by circular paths. The inner sidewall and the outer sidewall of at least one of the plurality of high refractive index portions have a first focus position. The inner sidewall or the outer sidewall of at least one of the plurality of high refractive index portions or a sidewall of the taper portion has a second focus position different from the first focus position.

Optical apparatus

An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a &#x3c;100&#x3e; crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a &#x3c;110&#x3e; crystal orientation of the substrate and including the single crystalline semiconductor material.

Optical integrated circuits, semiconductor devices including the same, and methods of manufacturing the same

An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Optical modulator formed on bulk-silicon substrate

Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Optical waveguide and coupler apparatus and method of manufacturing the same

A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Memory system, memory test system and method of testing memory system and memory test system

A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Semiconductor memory devices, controllers, and semiconductor memory systems

A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.

Multi-chips with an optical interconnection unit

Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.

Optical interconnection system for transmitting and receiving a three-level signal and method of operating the same

Growing community of inventors

Pyeongtaek-si, South Korea

Seong-gu Kim