Semes Co., Ltd.

Seong Gil Lee

Wan Jae Park

Dong Sub Oh

Young Je Um

Myoung Sub Noh

Dong Hun Kim

Dong-Hun Kim

Ji Hwan Lee

Joun Taek Koo

Du Ri Kim

Hye Joon Kheel

Ji Hoon Park

Yoon Jong Ju

Jihoon Park

Min Sung Han

Ji-hwan Lee

Sehoon Oh

Jun Taek Koo

Jae Hwan Kim

Da Som Bae

Myoungsub Noh

Ji-Hwan Lee

Da Yeong Jeong

Yun Woo Kim

A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the first direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

Substrate processing apparatus and method using the plasma

A method of fabricating a semiconductor device with improved electrical characteristics and reliability is provided. The method of fabricating the semiconductor device includes providing a substrate, in which a first oxide film, a nitride film, and a second oxide film are sequentially stacked, and a trench penetrating the first oxide film, the nitride film, and the second oxide film is formed, chamfering the oxide film exposed by the trench while removing a part of the nitride film exposed by the trench by using a first plasma process, and removing the nitride film left after the first plasma process by using a second plasma process.

Method for fabricating semiconductor device and apparatus for processing substrate using plasma

Disclosed are a method of forming a pattern structure including a silicon nitride. According to the embodiment of the present disclosure, the method of forming a pattern structure includes a step of providing, into a substrate processing apparatus, a substrate having one surface on which a pattern structure including a recess region in which an opening periphery portion and a bottom portion are made of a first silicon nitride is formed, a deposition step of depositing a second silicon nitride on the first silicon nitride, an etching step of etching the second silicon nitride, and a step of performing steps in one cycle n times until the first silicon nitride constituting the bottom portion is removed.

Method of forming pattern structure including silicon nitride

An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

Apparatus and method for processing substrate

The present invention provides a substrate treating method, including: a first treatment operation of treating the substrate by using first plasma generated by exciting first gas; and a second treatment operation of treating the substrate by using second plasma generated by exciting second gas different from the first gas.

Substrate treating apparatus and substrate treating method

A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.

Substrate treating method and substrate treating apparatus

A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Apparatus and method for processing substrate using plasma

A substrate treating apparatus and a substrate treating system including the same are disclosed, in which the number of heat treatment chambers such as anneal chambers may be varied. The substrate treating apparatus includes a first chamber heat-treating a substrate; and a second chamber treating the substrate in another way different from heat-treatment, wherein the number of the first chambers is varied depending on the number of the second chambers that need heat treatment for the substrate.

Substrate treating apparatus and substrate treating system comprising the same

A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.

Growing community of inventors

Hwaseong-si, South Korea

Seong Gil Lee