Samsung Electronics Co., Ltd.

Seong Geon Lee

Dae-Won Kim

Kyungduk Lee

Youn-Soo Cheon

Seungjun Oh

A method of operating a non-volatile memory device includes receiving a first command signal for a state check operation from the storage controller, determining whether the non-volatile memory device is in a busy state based on the first command signal, determining whether a busy time interval during which the busy state is continuously maintained exceeds a threshold time interval in response to determining that the non-volatile memory device is in the busy state, performing a reset operation of the non-volatile memory device in response to determining that the busy time interval exceeds the threshold time interval, and providing a fail response signal to the storage controller in response to determining that the busy time interval exceeds the threshold time interval.

Non-volatile memory device performing reset operation, storage device including the same, method of operating the same

A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a '0' bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.

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Suwon-si, South Korea

Seong Geon Lee