Infineon Technologies Americas Corp.

Seong-Eun Park

Mihir Tungare

Scott Alan Nelson

Peter Kim

Jianwei Wan

Srinivasan Kannan

A compound semiconductor device includes a first III-nitride buffer layer doped with carbon and/or iron, a second III-nitride buffer layer above the first III-nitride buffer layer and doped with carbon and/or iron, a first III-nitride device layer above the second III-nitride buffer layer, and a second III-nitride device layer above the first III-nitride device layer and having a different band gap than the first III-nitride device layer. A two-dimensional charge carrier gas arises along an interface between the first and second III-nitride device layers. The first III-nitride buffer layer has an average doping concentration of carbon and/or iron which is greater than that of the second III-nitride buffer layer. The second III-nitride buffer layer has an average doping concentration of carbon and/or iron which is comparable to or greater than that of the first III-nitride device layer. A method of manufacturing the compound semiconductor device is described.

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Woodbury, MN, United States of America

Seong-Eun Park