Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Dongjin Semichem Co., Ltd.

Seong-Bae Kim

Gee-Sung Chae

Hong-Sick Park

Gyoo-Chul Jo

Oh-Nam Kwon

Kyoung-Mook Lee

Byung-Uk Kim

Yong-Sup Hwang

Wy-Yong Kim

Suk-Il Yoon

Jong-Hyun Jeong

Soon-Beom Huh

Suk-Chang Jang

Suk-ll Yoon

The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same

A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Composition and method for removing copper-compatible resist

A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.

Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same

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Seoul, South Korea

Seong-Bae Kim