Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Seon-Pil Jang

Young-Min Kim

Bo-Sung Kim

Seung-Hwan Cho

Tae-Young Choi

Jung-Han Shin

Kang-Moon Jo

Min-Ho Yoon

Bo Sung Kim

Yeon-Taek Jeong

Young Min Kim

Kang Moon Jo

Hi-Kuk Lee

Gug-Rae Jo

Kyu-Young Kim

Young-Soo Yoon

Ki-beom Lee

Jung-Hun Noh

Chang-Hoon Kim

Hong-Suk Yoo

Seong-Sik Shin

Min-Uk Kim

Ju-Han Bae

Yeon Taek Jeong

Bo-Kyoung Ahn

Ki Beom Lee

Doo-Hyoung Lee

A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Thin film transistor array panel and display device including the same, and manufacturing method thereof

Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn &#x2003;&#x2003;(Formula 1)Herein, M is a metal ion, A is an organic ligand which includes &#x3b1;-substituted carboxylate, and n is a natural number.

Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same

A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

Display substrate and method of manufacturing the same

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Thin film transistor array panel and manufacturing method thereof

A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.

Method of manufacturing semiconductor for transistor and method of manufacturing the transistor

Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

Organic thin film transistor and method of manufacturing the same

An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.

Organic thin film transistor substrate and method of manufacturing the same

The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

Display device and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Seon-Pil Jang