Seoul Viosys Co., Ltd.

Seon Min Bae

Jong Min Jang

Jong Hyeon Chae

Daewoong Suh

Hyun A Kim

Won Young Roh

Joon Sup Lee

Min Woo Kang

Chung Hoon Lee

Chae Hon Kim

Jae Hee Lim

Chang Yeon Kim

Seom Geun Lee

Kyu Ho Lee

Jong Kyun You

Da Hye Kim

Tae Gyun Kim

Hee Sub Lee

A UV light emitting diode includes a substrate having a plurality of holes surrounded by a flat surface, a first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A distance from the flat surface to the active layer is smaller than a distance from bottom surfaces of the plurality of holes to the active layer. The flat surface is in contact with the first conductivity type semiconductor layer.

UV light emitting diode

Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

Light emitting diode and LED module having the same

An LED includes a gallium nitride substrate, a first semiconductor layer disposed thereon, and a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer. A first contact layer includes an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part. A second contact layer is disposed on the mesa in contact with the second semiconductor layer. An upper insulation layer has first and second opening parts overlapping the first and second contact layers. First and second electrode pads are electrically connected to the first and second contact layers through the first and second opening parts. The LED can be driven at-A/cmand has a maximum junction temperature of-&#xb0; C.

High-power light-emitting diode and light-emitting module having the same

Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

Light-emitting device with improved light extraction efficiency

A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.

Light emitting device having wide beam angle and method of fabricating the same

A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench.

Method of fabricating light emitting device through forming a template for growing semiconductor and separating growth substrate

A light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first contact electrode forming ohmic contact with the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; and an insulation layer disposed on the light emitting structure and insulating the first contact electrode from the second contact electrode, wherein the first conductive type semiconductor layer includes a nitride-based substrate, the nitride-based substrate having a thread dislocation density of 10cmor less, an oxygen impurity concentration of 10cmor less, and an optical extinction coefficient of less than 5 cmat a wavelength of 465 nm to 700 nm.

Light emitting diode

A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.

Growing community of inventors

Ansan-si, South Korea

Seon Min Bae