Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Seon-Il Kim

Jong-Hyun Choung

In-Bae Kim

Young-Chul Park

In-Ho Yu

Suck-Jun Lee

Yu-Gwang Jeong

Sang Gab Kim

Sang-tae Kim

Ji-Young Park

Sang-Hoon Jang

Joon-Woo Lee

Young-Jun Jin

Young-Jin Yoon

Jae-Woo Jeong

Hong-Sick Park

Wang Woo Lee

Sungwon Cho

Sang-Gab Kim

Shin-Il Choi

Yeun Tae Kim

Hong Sick Park

Yun Jong Yeo

Su Bin Bae

Hongsick Park

Dae Won Choi

Subin Bae

Sung Won Cho

O-Byoung Kwon

Min-Ki Lim

Daewon Choi

In Seol Kuk

Keyong Bo Shim

Hoon Jong Kang

Min Su Kim

Hyang-Shik Kong

Jung Wook Lee

Bong-Kyun Kim

Ji Hun Kim

Hee-keun Lee

Sang-woo Kim

Yu-Jin Lee

Sanggab Kim

Koichi Sugitani

Ki-beom Lee

Yunjong Yeo

Chang Oh Jeong

Sam-Young Cho

Min Ho Moon

Dae-woo Lee

Young Min Moon

Ki Tae Kim

Gi-Yong Nam

Youngjin Yoon

Giyong Nam

Kyong-Min Kang

Dong-Ki Kim

Youngchul Park

In-Seol Kuk

Inseol Kuk

Inho Yu

Suckjun Lee

A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

Display substrate, method of manufacturing the same, and display device including the same

A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70&#xb0; to about 90&#xb0;. A thickness of the capping layer is in a range of about 100 &#x212b; to about 300 &#x212b;, and a thickness of the main conductive layer is in a range of about 1,000 &#x212b; to about 20,000 &#x212b;.

Display device, method for forming a pattern and method for manufacturing display device

A display apparatus includes a wire grid pattern layer and a capping layer. The wire grid pattern layer includes protrusions having the same shape and spaced at uniform intervals to form a wire grid. The capping layer is on the wire grid pattern layer. The protrusions include metal, and the capping layer includes metal oxide which is an oxide of the metal.

Display apparatus and method of manufacturing the same

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.

Etchant and method of manufacturing display device by using the same

A liquid crystal display device includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected with the thin film transistor; and a roof layer disposed to face the pixel electrode, wherein a plurality of microcavities having respective liquid crystal injection holes are formed between the pixel electrode and the roof layer, and the microcavities are filled with electrically orientatable liquid crystal molecules, wherein a light blocking layer disposed adjacent to the injection holes is formed and covering the thin film transistor, wherein the light blocking layer is covered by a passivation layer.

Liquid crystal display and method of manufacturing the same

The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.

Display device and manufacturing method thereof

A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.

Liquid crystal display

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Etchant composition and method of forming metal wire and thin film transistor array panel using the same

An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

Etching composition, method of forming a metal pattern using the etching composition, and method of manufacturing a display substrate

An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.

Etchant and method for manufacturing display device using the same

A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor.

Etching device useful for manufacturing a display device

Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water.

Non-halogenated etchant and method of manufacturing a display substrate using the non-halogenated etchant

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Seoul, South Korea

Seon-Il Kim