Hyundai Autron Company Ltd.

Seon-hyeong Jo

Hyuk Woo

Young Joon Kim

Ju Hwan Lee

Tae Young Park

Tae Youp Kim

Seong-hwan Yun

Jeong Mok Ha

Min Gi Kang

The power semiconductor device includes: a first trench gate and a second trench gate in a stripe shape extending in one direction in parallel and spaced apart from each other in a substrate; a third trench gate in a ladder shape extending in a direction different from the one direction between the first trench gate and the second trench gate in the substrate; a first conductive type body area each disposed between the first trench gate, the second trench gate and the third trench gate, respectively, in the substrate; a pair of first conductive type floating first areas surrounding each of bottom surfaces and at least one side of the first trench gate and the second trench gate in the substrate; and a first conductive type floating second area surrounding a bottom surface of the third trench gate in the substrate.

Power semiconductor device and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Seon-hyeong Jo