Samsung Electronics Co., Ltd.

Seon-Ah Nam

Sung-Hoon Kim

Dong-Hyun Kim

Kyung-Soo Kim

Chul-hong Park

Nak-jin Son

Hae-wang Lee

Il-ryong Kim

Kwang-You Seo

Wook-hyun Kwon

Yeon-Ho Park

Kwang-Yong Jang

Ikuo Nakamatsu

Yun-Se Oh

Ho-Jun Choi

Gi-bong Lee

A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.

Method of designing a layout of a semiconductor device, and a semiconductor device including a fin

A method of fabricating a semiconductor device includes forming a dummy gate on a substrate, forming a dummy gate mask on the dummy gate, forming a gate spacer on the substrate, the gate spacer covering at least one sidewall surface of the dummy gate and the dummy gate mask, forming a recess on at least one side of the dummy gate by etching the substrate, and forming an epitaxial layer in the recess using an epitaxial growth process. The forming of the dummy gate mask includes forming an oxide layer and a dummy gate mask layer on the dummy gate.

Method for fabricating semiconductor device

A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.

Method of manufacturing semiconductor device

Growing community of inventors

Seoul, South Korea

Seon-Ah Nam