Samsung Electronics Co., Ltd.

Seol Young Choi

Hideki Horii

Dong-Ho Ahn

Jin-Woo Lee

Jeong-Hee Park

Soon-Oh Park

Zhe Wu

Dong-Jun Seong

Jung Moo Lee

Min Kyu Yang

Dong Jun Seong

Dong Ho Ahn

Seong Geon Park

Sung Soo Park

Seong-Geon Park

Jung-Moo Lee

Min-kyu Yang

Dong-jun Seong

Shinya Ishizaki

Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Methods of forming semiconductor devices having threshold switching devices

A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

Memory device

Method of forming semiconductor devices having threshold switching devices

A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below,[GeSi(AsTe)][N]&#x2003;&#x2003;(1)

A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Variable resistance memory device and method of manufacturing the same

Alight emitting device package may include a printed circuit board and a plurality of light emitting devices mounted on the printed circuit board, wherein a first light emitting device of the plurality of light emitting devices may comprise first to fourth conductor pads formed discretely on the bottom surface of the light emitting device, the printed circuit board comprises first to fourth conductor patterns formed discretely on the top surface of the printed circuit board, and the first to fourth conductor patterns are connected to respective first to fourth conductor pads by respective first to fourth solders.

Light emitting device package and lighting apparatus including the same

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Yongin-si, South Korea

Seol Young Choi