Samsung Electronics Co., Ltd.

Seokyong Park

Kyungmin Kim

Donghyun Kim

An image sensor includes a pixel array including a first pixel connected to a first column line and a second pixel connected to a second column line, each of the first pixel and the second pixel including a first photodiode (PD) and a second PD, which share a driving transistor, are configured to operate in a first mode and a second mode according to a conversion gain based on the first PD, and are configured to operate in a third mode and a fourth mode based on the second PD; and an analog-to-digital converter including a first correlated double sampling (CDS) circuit, a second CDS circuit, and a third CDS circuit, which read pixel signals output through the first column line and the second column line. The first CDS circuit is connected to the first column line and the second column line in a time-division manner.

Image sensor including time-division controlled correlated double sampler and electronic device including the same

A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

Growing community of inventors

Hwaseong-si, South Korea

Seokyong Park