Samsung Electronics Co., Ltd.

Asm IP Holding B.v.

SeokJae Oh

HeeSung Kang

YoungJae Kim

WanGyu Lim

HyounMo Choi

Yuseong Jeon

Yeseul Park

Byoungho Yun

Jieun Kim

Seunghoon Lee

Jinhong Kim

Shinya Ueda

YoonKi Min

Gaeul Kim

JaeOk Ko

Bongsung Yu

JaeBin Ahn

Wangyu Lim

Sejun Han

HyunGyu Jang

SeongIl Cho

Eunsang Jeon

A method of operating a display apparatus includes: obtaining situation information for voice recognizer selection, selecting at least one of a plurality of voice recognizers based on the situation information, obtaining a voice recognition result from a voice signal, using the selected at least one voice recognizer, and obtaining a chat message from the voice recognition result.

Display apparatus and operating method thereof

A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

Thin-film deposition method and system

An electronic apparatus including: a communication interface; a memory to store meta data corresponding, respectively, to a plurality of contents including a first content and a second content; and at least one processor configured to acquire characteristic information corresponding to the first content and the second content, respectively, based on first content information of the first content and second content information of the second content received through the communication interface, provided the first content information of the first content and the second content information of the second content, do not match each other, and provide a chatting room for the first content and the second content provided the first content and the second content are a same content based on the received first content information and the second content information, the acquired characteristic information, and the meta data stored in the memory.

Electronic apparatus and method for controlling thereof

Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

Substrate processing method

An example method of operating a display apparatus includes obtaining display apparatus state information indicating data processing performance of the display apparatus, transmitting the display apparatus state information to a server that provides a chat service, receiving chat messages transmitted from the server according to a message throughput determined based on the display apparatus state information, and outputting the received chat messages.

A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

Growing community of inventors

Suwon-si, South Korea

SeokJae Oh