Samsung Electronics Co., Ltd.

Seok-Woo Nam

Hun-Hyeoung Leam

Jung-Hwan Kim

Yong-Seok Kim

Tae-Hyun Kim

Tea-Kwang Yu

Hyun Namkoong

Han-jin Lim

Hyeon-Deok Lee

Ki-Hyun Hwang

Bong-hyun Kim

Sang-Hoon Lee

Young-Jin Kim

Woong Hee Lee

Young-sub You

Soo-jin Hong

Hyo-Jung Kim

Kyoung-Seok Kim

Kyoung-Ryul Yoon

Bong-Hyun Kim

Sung-Jin Kim

Jong-Kyu Kim

Dong-Chan Kim

Jae-hyoung Choi

Ki-Vin Im

Kyoung-Sub Shin

Hyun Uk Park

Youn-soo Kim

In-seak Hwang

Jae-Young Park

Kong-Soo Lee

Jae-Jik Baek

Taek-Soo Jeon

Kwang-Wook Lee

Jung-Hwan Oh

Yong-Woo Hyung

Won-Jun Jang

Yil-hyung Lee

Yoo-Chul Kong

Jae-young Park

Won-Seok Yoo

In-Sang Jeon

Won-sik Shin

Jae-hong Seo

Jung-Hee Chung

Eun-Ae Cho

Dong-Woon Shin

Jong-Soon Park

Young-Sub You

Soon-Gun Lee

Seung-Sik Chung

Beom-jong Kim

Won-Shik Shin

Hun-Young Lim

Chin-Moo Cho

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

Method of processing a substrate using an ion beam and apparatus for performing the same

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

Semiconductor device and method of fabricating the same

A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Semiconductor devices including diffusion barriers  with high electronegativity metals

A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line.

Semiconductor device

A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):HSiA(NRR)&#x2003;&#x2003;(1)HSi(NAR)&#x2003;&#x2003;(2)HSi(R)(R)&#x2003;&#x2003;(3)wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R, R, R, and Rare each independently selected from the group of H, aryl, perhaloaryl, Calkyl, and Cperhaloalkyl, and Ris aryl in which at least one hydrogen is replaced with a halogen or Calkyl in which at least one hydrogen is replaced with a halogen.

Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an active region defined by a device isolation layer formed in a cell region, a transistor including a buried gate in the active region, a metal contact formed on the active region positioned at one side of the buried gate, a landing pad on the metal contact, a capacitor on the landing pad and electrically connected to the active region, and a metal oxide layer between the metal contact and the active region.

Semiconductor devices including buried channels

A semiconductor device includes a semiconductor substrate having at least two oblique side surfaces and a first bottom surface in a recessed portion. A gate insulating layer is formed on the recessed portion. A gate electrode is formed on the gate insulating layer. A channel region is formed below the gate electrode. Gate spacers are formed on side surfaces of the gate electrode.

Semiconductor devices including gate structure and method of fabricating the same

A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer.

Method of forming semiconductor device having a capacitor

In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall of the opening. A lower electrode is formed covering the seed on the innerwall of the opening. The sacrificial layer and the seed are removed. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.

Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same

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