Dongbu Electronics, Co. Ltd.

Seok-Su Kim

A method for manufacturing a semiconductor device includes forming a gate insulating layer, a gate and a protective layer on a semiconductor substrate, forming a spacer on lateral sides of the protective layer and the gate, forming one or more junction regions in the semiconductor substrate at sides of the gate, partially filling a gap between adjacent gates by selectively forming a conductive layer on an exposed portion of the semiconductor substrate between the adjacent gates, forming an insulating layer over the semiconductor substrate so as to fill a full height of the gap between the adjacent gates, and forming a contact hole partially exposing the conductive layer by etching the insulating layer.

Semiconductor device and method for manufacturing the same

An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.

A method for forming a metal-insulator-metal (&ldquo;MIM&rdquo;) capacitor is provided. In the method, a first metal film and an dielectric film are sequentially formed on a semiconductor substrate. A trench through which the first metal film is exposed is formed by patterning the dielectric film. A insulation film and a second metal film are sequentially formed on a surface of the trench and the dielectric film. A mask pattern defining a capacitor forming area is provided on the second metal film. The second metal film and the insulation film are etched by using the mask pattern and the dielectric film as an etching barrier and an etching stopper layer, respectively, to form an upper electrode. With the mask pattern removed, a lower electrode is formed by patterning the dielectric film and the first metal film.

Growing community of inventors

Icheon-si, South Korea

Seok-Su Kim