Skhynix Inc.

Seok Man Hong

Tae Yong Lee

Hyung Dong Lee

Ki Won Lee

Won Jun Lee

Beom Seok Lee

Byeong Cheol Yoon

Sang Young So

Hee Soo Jeong

Kyu Ho Shin

A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Semiconductor device

A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Variable resistive memory device and method of driving a variable resistive memory device

Growing community of inventors

Seoul, South Korea

Seok Man Hong