Korea Institute of Science and Technology

Lg Electronics Inc.

P.i., Inc.

Nano Pharmasolutions, Inc.

Seok-Keun Koh

Hyung Jin Jung

Won Kook Choi

Jun-Sik Cho

Won-Kook Choi

Hyung-Jin Jung

Jung Woo Cho

Young-Gun Han

Young-Whoan Beag

Jonghee Han

Ki Hwan Kim

Suk Woo Nam

Sung Pil Yoon

Yong Min Kim

Young-soo Yoon

Cheol Hwan Kim

Chang Won Yoon

Kay Olmstead

Hyung Chul Ham

Yeong Cheon Kim

Sam Chul Ha

Byung Ha Kang

Jihoon Jeong

DongJin Byun

Dong-Hwa Kum

Seok-Kyun Song

Saeyeon Lee

Sung-Chang Choi

Provided herein is a coated particle comprising: (i) a microparticle that comprises a pharmaceutically acceptable excipient and (ii) nanoparticles of a therapeutic agent, wherein the surface of the microparticle is coated with the nanoparticles. Also provided herein is a pharmaceutical composition comprising the coated particle. Furthermore, provided herein are methods of their preparation.

Therapeutic agent nanoparticles and methods of preparation

Provided are: a dry reforming catalyst, in which a noble metal (M) is doped in a nickel yttria stabilized zirconia complex (Ni/YSZ) and an alloy (M-Ni alloy) of the noble metal (M) and nickel is formed at Ni sites on a surface of the nickel yttria stabilized zircona (YSZ); a method for producing the dry reforming catalyst using the noble metal/glucose; and a method for performing dry reforming using the catalyst. The present invention can exhibit a significantly higher dry reforming activity as compared with Ni/YSZ catalysts. Furthermore, the present invention can have an improved long-term performance by suppressing or preventing the deterioration. Furthermore, the preparing method is useful in performing the alloying of noble metal with Ni at Ni sites on the Ni/YSZ surface and can simplify the preparing process, and thus is suitable in mass production.

Dry reforming catalyst, method for preparing same, and dry reforming method using corresponding catalyst

Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.

Method of forming ITO film

According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and there is also provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using an RF plasma.

Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning

An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage () applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.

Apparatus for surface modification of polymer, metal and ceramic materials using ion beam

A method of depositing indium oxide or indium tin oxide thin film on a polymer substrate is disclosed. In the method, oxygen or argon ion beam is radiated on a polymer substrate by a constant accelerating energy in a vacuum state to modify the surface of the polymer substrate, on which an IO thin film or an ITO thin film is deposited while oxygen ion beam, argon ion beam or their mixture ion beam is being radiated in a vacuum state. In addition, ion beam is generated from a cold cathode ion source by using argon, oxygen or their mixture gas and sputtered at a target substance composed of In O or In O and SnO , thereby an IO or an ITO thin film can be deposited on the surface-modified polymer substrate.

Method for pretreating a polymer substrate using an ion beam for subsequent deposition of indium oxide or indium tin oxide

An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (,) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.

A method for modifying an (oxide) material of a substrate surface to a nitride material by radiating reactive ion particles having a certain amount of energy onto the substrate surface is disclosed. The thin film deposited on the surface-modified substrate has improved material properties. In particular, a surface treatment using ion beam is executed on an Al.sub.2 O.sub.3 substrate to initially form an AlN thin film, and then a GaN thin film is deposited on said AlN thin film. From this, it is possible to obtain a high quality GaN thin film having a better material property, compared with a GaN thin film according to the prior art.

Pretreatment method for a substrate surface using ion beam radiation and

The present invention relates to a process for modifying a polymer surface by irradiating ion particles with energy on a polymer surface, while blowing the reactive gas directly on the polymer surface under vacuum condition, to decrease the wetting angle of the polymer surface. The process for modifying the polymer surface according to the present invention can be widely used in the application fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the polymer surface.

Process for modifying surfaces of polymers, and polymers having surfaces

Growing community of inventors

Seoul, South Korea

Seok-Keun Koh