Samsung Electronics Co., Ltd.

The Catholic University of Korea Industry-Academic Cooperation Foundation

Sewon Cellontech Co., Ltd.

Seok-Jung Kim

Eun Kyung Kim

Sung-Hee Lee

Hyun-Jo Kim

Jung-gug Pae

Mi-La Cho

Seon-Yeong Lee

Sung-Hwan Park

Young-Uk Chang

Eun-Jung Lee

Sae-Bom Lee

Jae-Deog Jang

Hyun-Shin Park

Ji-Chul Yu

Kyoung-Woon Kim

Eun Ji Yang

Min Jung Park

Chul Woo Yang

Byung Ha Chung

Ju-Hee Park

Jeong-hee Jeong

Cheong-Ho Jang

Su-Jin Moon

Se-Ken Yeo

Soo-Han Park

Moon-Whan Lee

The present invention relates to a mesenchymal stem cell having immunomodulatory activity and a preparation method therefor and, more specifically, to: a rapamycin-treated mesenchymal stem cell having immunomodulatory activity, which expresses any one or more cell surface factors selected from the group consisting of CCR1, CCR2, CCR3, CCR4, CCR7, CCR9 and CXCR4; a cell therapy composition comprising the mesenchymal stem cell, for preventing or treating immune disorders; and a preparation method for the mesenchymal stem cell having immunomodulatory activity. The rapamycin-treated mesenchymal stem cell having immunomodulatory activity, according to the present invention, has increased expression of IDO, TGF-&#x3b2; and IL-10 which are factors having immunomodulatory activity, has decreased expression of Phospho-mTOR, Rictor and Ractor which are signal transduction factors of mTOR, and has increased expression, in the cell, of autophagic inducer Beclin1, ATG5, ATG7, LC3I or LCII. If this cell is used as a cell therapy in individuals having immune disorders, it is possible to effectively treat immune disorders.

MTOR/STAT3 signal inhibitor-treated mesenchymal stem cell having immunomodulatory activity, and cell therapy composition comprising same, for preventing or treating immune disorders

A memory device that includes a memory cell array and control circuit in which the memory cell array includes a normal region including a first failed block and a redundant region including a first redundant block replacing the first failed block. The control circuit includes a mapping table storing replacement information. The control circuit refers to the mapping table for accessing the first redundant block. When testing the memory device, the control circuit writes '1' in the normal region and the first redundant block, writes '0' in the redundant region except the first redundant block, adds the replacement information regarding a second failed block and second redundant block in the redundant region to the mapping table and verifies the result of replacing the second failed block with the second redundant block based on entire data read from the memory cell array with respect to entire range assigned to the address signal.

Memory device, memory system and method of verifying repair result of memory device

A color noise killing circuit for video tape duplicating apparatus which is capable of eliminating the color noise during a fine copy mode comprises mode setting circuit, color signal detecting circuit, selecting circuit and transmission, controlling circuit so that the color noise killing circuit detects via color signal detecting circuit a color signal of the play back system during the fine copy mode and thereby the transmission controlling circuit controls the selecting circuit to selectively supply signals corresponding to the respective modes to the recorder system. Consequently, by supplying the recorder with only luminance signals when black and white image signals are reproduced during the fine copy mode, the circuit achieves an improvement of picture quality duplicated.

Noise killing circuit for video tape duplicating apparatus

Growing community of inventors

Seoul, South Korea

Seok-Jung Kim