Other

University of Illinois

Lg Electronics Inc.

Lg Display Co., Ltd.

Soulbrain Co., Ltd.

Seok Joo Kim

Yoon Heung Tak

Hyeong Ju Lee

Kyung Il Park

Ki Beom Kim

Yoon Soo Han

ChangHee Son

Jeong Ho Lee

Placid M Ferreira

Sang Dae Kim

SeungHyun Lee

Proposed are cerium oxide particles for chemical mechanical polishing and a slurry composition for chemical mechanical polishing comprising the same. The surfaces of the cerium oxide particles comprise Ceand Ce. When the cerium oxide particles are used, they may exhibit a high oxide removal rate and high oxide selectivity in a low particle content range despite their fine particle size as a result of increasing the proportion of Ceon the cerium oxide surface.

Cerium oxide particles, chemical mechanical polishing slurry composition comprising same, and method for manufacturing semiconductor device

An adhesive gripper for pick-and-place maneuvers comprises one or more legs, where each leg terminates in a foot rotatably connected to the respective leg. Each foot includes a SMP dry adhesive comprising a shape memory polymer, and a rigid backing layer attached to a back side of the SMP dry adhesive, such that a front side of the SMP dry adhesive is available for attachment and release of objects. The adhesive gripper further includes a handle portion connected to the one or more legs, a release mechanism comprising a release ring within the handle portion, and one or more releasing rods integrated with the one or more legs for release of an object onto a substrate.

Adhesive gripper comprising a shape memory polymer for pick- and-place applications

A dry adhesive for attachment to a flexible adherend comprises a shape memory polymer having a glass transition temperature (T) above 25° C. and a compliant backing layer attached to the shape memory polymer. The shape memory polymer is configured to form a conformal and/or hermetic contact with a flexible adherend at temperatures at or above the Tand to retain the conformal and/or hermetic contact during flexing of the flexible adherend at temperatures below the T.

Dry adhesive comprising a shape memory polymer for attachment to a flexible adherend

The present invention relates to a slurry composition for polishing and a method for polishing a semiconductor thin film with steps of a high aspect ratio, and more particularly, by comprising polishing particles, a compound represented by Chemical Formula 1 below, and a compound represented by Chemical Formula 2 below, to make a slurry composition for polishing that has a high polishing speed in high stepped regions while simultaneously protecting low stepped regions to obtain a high degree of flatness without leaving remaining steps after the completion of polishing, and a method for polishing a semiconductor thin film with steps of a high aspect ratio.  

Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio

The present invention provides a sunscreen composition comprising cerium oxide (CeO) particles surface-modified with a saturated fatty acid having 10 to 30 carbon atoms or an unsaturated fatty acid having 10 to 30 carbon atoms. Since the sunscreen composition according to an embodiment of the present invention exhibits a high kinematic viscosity in the low-frequency region and high-frequency region, the formulation has excellent emulsification/dispersion phase stability and excellent spreadability, and thus the sunscreen composition can be effectively used as a cosmetic composition for blocking ultraviolet rays.

Sunscreen composition containing surface modified cerium oxide particles

A chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film is presented, comprising: a solvent; a polishing agent; a pH adjuster; and at least one additive selected from the group consisting of a compound represented by Chemical Formula 1 below, a compound represented by Chemical Formula 2 below, and a tautomer thereof. The chemical mechanical polishing slurry composition for polishing a polycrystalline silicon film exhibits a high polishing speed and has various polishing selectivities when employed in a process for polishing a polycrystalline silicon film of a semiconductor wafer, and thus the composition may be effectively used as a composition for a process for polishing a polycrystalline silicon surface for the formation of highly integrated multilayer structured devices. 

Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film

A chemical-mechanical polishing slurry composition, comprising a polishing agent, an amine-based polishing activator, and a roughness adjusting agent, wherein the amine-based polishing activator is a tertiary or quaternary amine, and the roughness adjusting agent is a disaccharide. According to the slurry composition, the roughness of tungsten and silicon oxide films can be modified and the number of particles present on the wafer surface after polishing can be reduces so that defects of the wafer can be prevented.

Chemical mechanical polishing slurry composition and method for manufacturing semiconductor using the same

The present invention disclosed the deposition source installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate, and comprising a vessel consisted of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating means for supplying heat to the deposition material received in the vessel, the heating means being capable of moving vertically; and a means for moving the heating means (or the bottom wall), the moving means (or the bottom wall) being operated in response to the signal of a sensing means on varied distances between the heating means and the surface of said deposition material. Thus, the heating means is moved downward (or the bottom wall) is moved upward by the moving means to maintain the distance between the heating means (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

Source for thermal physical vapor deposition of organic electroluminescent layers

A deposition source is provided which is installed in a chamber, heated by applied electric power to transfer heat to a vapor deposition material received therein and applying a vaporized deposition material generated therein to a substrate to form deposition organic electroluminescent layers onto the substrate. The deposition source includes a vessel formed of a top plate on which a vapor efflux aperture is formed, a side wall, and a bottom wall; a heating device that supplies heat to the deposition material received in the vessel, the heating device being capable of moving vertically; and a moving device that moves the heating device (or the bottom wall), the moving device (or the bottom wall) being operated in response to the signal of a sensing device on varied distances between the heating device and the surface of said deposition material. Thus, the heating device is moved downward (or the bottom wall) is moved upward by the moving device to maintain the distance between the heating device (or the substrate to be coated) and the surface of the deposition material at an initially-set value when the thickness of the deposition material is decreased.

Growing community of inventors

Seongnam-si, South Korea

Seok Joo Kim