Samsung Electronics Co., Ltd.

Seok-Joo Doh

Hyung-suk Jung

Yun-Seok Kim

Nae-in Lee

Jong-ho Lee

Jong-Ho Lee

Ho-Kyu Kang

A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

Semiconductor devices having different gate dielectrics and methods for manufacturing the same

High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices

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Suwon, South Korea

Seok-Joo Doh