Samsung Electronics Co., Ltd.

Seok-jae Chung

Soon-won Hwang

I-hun Song

Geun-Young Yeom

Chang-Soo Lee

Young-soo Park

Jung-hyun Lee

Myoung-jae Lee

Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure.

Resistive memory device and method of manufacturing the same

Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

Method of forming nano-sized MTJ cell without contact hole

Growing community of inventors

Seongnam-si, South Korea

Seok-jae Chung