Korea Institute of Science and Technology

Seok In Na

Jun Kyung Kim

Sung Ho Lee

Bon-Cheol Ku

Hye Young Koo

Ok-kyung Park

Joong Hee Lee

Han Ik Jo

Jun Seok Yeo

Dong Yu Kim

Jin Mun Yun

Methods of preparing reduced graphene oxide and reduced graphene oxide-polymer composites. The methods include covalently binding a halogen-substituted aromatic compounds to a graphene oxide and heat treating the graphene oxide with the halogen-substituted aromatic compounds covalently bound thereto at a low temperature, for example, 450&#xb0; C. or less. By using the methods, reduced graphene oxide and reduced graphene oxide-polymer composites that have high electrical conductivities (e.g., 30,000 S/m or more) may be obtained.

Method of preparing reduced graphene oxide and reduced graphene oxide-polymer composites

A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.

Preparation method for reduced graphene oxide using sulfonyl hydrazide-based reducing agent and optoelectronic devices thereof

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Gwangju, South Korea

Seok In Na