Samsung Electronics Co., Ltd.

Skhynix Inc.

Korea Advanced Institute of Science and Technology

Seok In Hong

Do Yeon Kim

Chan Woo Park

Jae Won Lee

Sang Ho Seo

Dong Woo Shin

Dong Uk Kim

Hong Seok Ko

Yong Kwon Kim

Jae Hyun Jang

Seung Hyun Ha

Woong Sub Yim

Jin Soo Jang

Byung Hoon Kang

Dae Hee Jang

Kim Do Yeon Yeon

An electronic device is disclosed. An electronic device comprises: a first memory in which an operating system and an application program executed on the operating system are stored; a second memory; a processor for loading at least some codes among codes corresponding to an application program from the first memory to the second memory, and when access information of the codes loaded in the second memory is received from a kernel of an operating system, accessing an area in which the loaded codes are stored, on the basis of the received information and executing the application program; and a snoop for monitoring access to an area in which a preset code, the access of which has been limited, from among codes loaded in the second memory is stored.

Electronic device and control method therefor

A semiconductor device comprises: a voltage generator suitable to pump a power source voltage to generate a first pumping voltage in response to an operation clock, a clock generator suitable to generate the operation clock having a first frequency during an initial operation period in which a level of the first pumping voltage is at a first level and to generate the operation clock having a second frequency after the initial operation period, the second frequency generated to be lower than the first frequency in response to a rise in a level of the first pumping voltage to a second level greater than the first level, and an internal circuit suitable to perform a predetermined internal operation in response to the first pumping voltage.

Charge pump circuit, operating method thereof and semiconductor device including charge pump circuit

An internal voltage generation circuit may include an oscillation circuit, a signal generation circuit, and a pumping circuit. The oscillation circuit may generate an oscillation signal. The signal generation circuit may generate first and second pumping driving signals on the basis of the oscillation signal. The pumping circuit may generate a pumping voltage through a pumping operation on the basis of the first and second pumping driving signals.

Internal voltage generation circuit

Disclosed are a washing machine and a method of controlling spin-drying of the washing machine. The method changes the acceleration gradient of the drum passing a resonance point, i.e., the resonance point passing gradient of the drum, when the imbalance of the laundry due to the excessive vibration of the tub is sensed when passing a resonance point region (generally within 100 RPM, approximately 50&#x2dc;80 RPM, after the entry into the spin-drying cycle) in the spin-drying cycle. Thus the position of the balancer is changed according to the imbalance of the laundry.

Washing machine and method of controlling spin-drying thereof

A drain pump including a case including a mounting bracket; a first connection member mounted to the mounting bracket to be spaced from the cabinet; a second connection member inserted in the first connection member; and a fastening member passed through the cabinet and inserted in the second connection member so that the case is mounted to the cabinet. Since the first connection member is spaced from the cabinet, the second connection member can be prevented from being damaged by vibration of the drain pump.

Drain pump and washing machine having the same

Growing community of inventors

Suwon-si, South Korea

Seok In Hong