Samsung Display Co., Ltd.

Ltcam Co., Ltd.

Seok-Ho Lee

Min-Sung Kim

Jung-Min Hong

Ki-Su Jin

Jin-Ho Ju

Bong-Yeon Kim

Jun-Hyuk Woo

Seong-Sik Jeon

Jong-Su Han

Jung-Hwan Song

Alexander Voronov

Gyoo-Wan Han

Kyung-Hoe Heo

Ji-Hunny Jung

A coating device includes an upper stage, a lower stage and a spraying part. The upper stage masks an upper surface of a display panel. The lower stage masks a lower surface of the display panel. The spraying part sprays ink to a side surface of the display panel. The side surface of the display panel is exposed between the upper stage and the lower stage. The coating device includes the upper stage and the lower stage, so that the coating device may form a coating layer of uniform thickness by precisely spraying ink. In addition, a cross-section of the coating layer may be precisely formed having specific shape such as an L or C shape. A display apparatus having high light usage efficiency and reduced light leakage may be provided by using the coating device.

Method of coating display device side surface

Coating device, method of manufacturing display substrate using the same and display substrate manufactured using the same

A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.

Cleaning composition and method of manufacturing metal wiring using the same

A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device

Growing community of inventors

Hwaseong-si, South Korea

Seok-Ho Lee