Samsung Electronics Co., Ltd.

Seog-Young Lim

Yang-Sun Kim

Jin-Seock Kim

Dong-Uk Choi

Dong-Jin Park

Koog-Lok Lee

Chun-Duek Lee

Shang-Oa Park

June-Ing Kil

A photoresist stripping composition suitable for both of the single wafer treatment method using an air knife process and a dipping photoresist stripping method. The composition comprises 5-15 weight % of alkanolamine, 35-55 weight % of sulfoxide or sulfone compound and 35-55 weight % of glycolether, and preferably further includes surfactant, and also 1-10 weight % of tetra methyl ammonium hydroxide or 3-15 weight % of benzenediol and 1-15 weight % of alkylsulfonic acid.

Photoresist stripping composition

A photoresist stripping composition is provided. The composition includes 10-30 weight % of alkanolamine, 10-35 weight % of dimethylsulfoxide, 30-50 weight % of N-methylpyrrolidone and 10-30 weight % of glycolether. The composition shows good stripping force and strips photoresist by a single-wafer treatment method using the air-knife process or by a dipping method.

Growing community of inventors

Kyungki-do, South Korea

Seog-Young Lim