Samsung Electronics Co., Ltd.

Seog-woo Hong

In-sang Song

Seok-whan Chung

Byeoung-ju Ha

Hae-seok Park

Dong-sik Shim

Chang-jung Kim

Joo-ho Lee

Byung-gil Jeong

Yun-kwon Park

Moon-chul Lee

Dong-kyun Kim

Hyung Ki Choi

Duck-hwan Kim

Chan-Bong Jun

Hyung Jin Choi

Hyung-jae Shin

Kuang-woo Nam

Seok-chul Yun

Dong-ha Shim

Seok-jin Kang

Kyu-dong Jung

Byeong-ju Ha

Jong-seok Kim

Mi Na Jang

Che-Heung Kim

Kyu-Dong Jung

Eun-sung Lee

Jun-sik Hwang

Jong-Seok Kim

Kyu-sik Kim

Seok-Whan Chung

Chan-Wook Baik

Jung-ho Kang

Yong-Soo Lee

Kuang-Woo Nam

Seok-Jin Kang

Hwan-soo Suh

Sung-chan Kang

Hye-jung Cho

In-seob Song

Sang-ha Park

Hao-seok Park

Ci-moo Shong

A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (TSV) substrate provided on a bottom surface of the device substrate, the TSV substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion.

Capacitive micromachined ultrasonic transducer and method of fabricating the same

A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.

An electro-acoustic transducer includes a plurality of elements that each includes a plurality of cells. The plurality of cells includes at least two membranes that have different thicknesses. The respective frequency bands of the plurality of elements are broader than respective frequency bands of the plurality of cells that configure the plurality of elements.

Electro-acoustic transducer

An electro-acoustic transducer includes: a conductive substrate in which a first trench is formed, and which includes an electrode connection unit surrounded by the first trench; a membrane provided on the conductive substrate; an upper electrode provided on the membrane to contact an upper surface of the electrode connection unit; a first electrode provided on a lower surface of the conductive substrate to contact a lower surface of the electrode connection unit; and a second electrode spaced apart from the first electrode and provided to contact the lower surface of the conductive substrate.

Electro-acoustic transducer and method of manufacturing the same

An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.

Electro acoustic transducer

A capacitive micro-machined ultrasonic transducer (CMUT) and a method of singulating the same. Singulating CMUTs may include forming first trenches in regions of a device wafer defining a plurality of ultrasonic transducer structures, the device wafer including a plurality of the ultrasonic transducer structures, forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer supplying electricity to the plurality of ultrasonic transducers and the device wafer, and dicing the ultrasonic transducer wafer to form the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures on the first trench and the electrode pad wafer below the first trench.

Capacitive micro-machined ultrasonic transducer and method of singulating the same

Electro-acoustic transducers and methods of manufacturing the electro-acoustic transducer are provided. An electro-acoustic transducer includes: a first wafer including a first substrate in which a plurality of electro-acoustic transducer cells are formed; and a second wafer disposed in a lower portion of the first wafer, and including a second substrate in which a plurality of through wafer vias are formed. A method of manufacturing an electro-acoustic transducer includes: forming a plurality of electro-acoustic transducer cells in a first substrate of a first wafer; forming a plurality of through wafer vias in a second substrate of a second wafer; and bonding the first and second wafers to each other.

An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

Ultrasonic transducer structure, ultrasonic transducer, and method of manufacturing ultrasonic transducer

An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a first electrode layer which is disposed to cover a conductive substrate and an inner wall and a top of a via hole penetrating a membrane and has a top surface at a same height as a top surface of the membrane; a second electrode layer which is disposed on a bottom surface of the conductive substrate to be spaced apart from the first electrode layer; and a top electrode which is disposed on the top surface of the membrane and which contacts the top surface of the first electrode layer.

Ultrasonic transducer and method of manufacturing the same

An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a conductive substrate, a projection which is disposed on the conductive substrate and which forms a cavity therein, a via hole which penetrates the projection and conductive substrate, a first electrode which includes a metal and which fills the via hole, a second electrode which is provided on a bottom of the conductive substrate, a membrane which is provided on the projection and which covers the cavity, and an upper electrode which is provided on the membrane and which contacts the first electrode.

A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Method of manufacturing a monolithic duplexer

There are provided a light screening apparatus and a manufacturing method thereof. The light screening apparatus includes a substrate, a transparent electrode, a plurality of roll-up actuators and a plurality of light screening patterns. The substrate includes a light-transmitting region and the transparent electrode is formed on one surface of the substrate. Each roll-up actuator, which has opaque characteristics, is fixed on the circumference portion of the light-transmitting region and includes a fixing end and a moving part which extends from the fixing end. Gaps are formed between adjacent roll-up actuators, and the light screening patterns are formed on the substrate at locations corresponding to the gaps. The light-screening patterns prevent light incident through the gaps from being transmitted to the light-transmitting region.

Light screening apparatus including roll-up actuators

Provided is a microelectromechanical system (MEMS) that includes a first structure and second structure. The first structure and second structure may each include a first substrate and a second substrate. The first substrate of each structure may have first and second surfaces that face each other. The first substrate may include a via etching hole pattern penetrating the first surface and the second surface and a first non-via etching hole pattern penetrating the first surface. The second substrate of each structure may have third and fourth surfaces that face each other. The second substrate may include a second non-via etching hole pattern penetrating the third surface in a position corresponding to the via etching hole pattern of the first substrate. In the microelectromechanical system (MEMS) the second surface of the first substrate and the third surface of the second substrate may be bonded together.

Microelectromechanical system device and method of manufacturing the microelectromechanical system device

A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

RF module with multi-stack structure

Growing community of inventors

Yongin-si, South Korea

Seog-woo Hong