Samsung Electronics Co., Ltd.

Seog-Min Lee

Cheol-Kyu Yang

Byung-Ho Ahn

Chul-Young Jang

Young-Min Kim

Jae-hyoung Choi

Sung-Wook Jung

Yong-Suk Kim

Sung-ho Kang

Sung-Ho Kang

Jung-Hee Chung

Yong-Kyu Joo

Dong-min Son

Sang-Cheol Ha

Dong-Min Son

Du-Han Jeon

Jong-bom Seo

A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess.

Apparatus for processing wafers

A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Batch type apparatus for manufacturing semiconductor devices

A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.

Method of manufacturing a dielectric film in a capacitor

A mass flow controller includes a base having a first passage, an inlet portion for introducing fluid into the first passage, an outlet portion for releasing the fluid from the first passage, and a second passage branched from a first upstream portion of the first passage and connected to a second downstream portion of the first passage A mass flow sensor is connected to the first passage between the inlet portion of the base and the first portion of the first passage; A first valve is disposed in-line with the first passage between the first and second portions. The first valve controls the mass flow of the fluid passing through the first passage;. A second valve is disposed in-line with the second passage to opens/close the second passage. A valve controller compares the mass flow measured by the mass flow sensor to a standard flow, and then positions the first valve such that the measured mass flow corresponds to the standard flow.

Substrate processing equipment having mass flow controller

Growing community of inventors

Suwon-si, South Korea

Seog-Min Lee