Samsung Electronics Co., Ltd.

Yonsei University

Seog-Heon Ham

Gun-Hee Han

Dong-Myung Lee

Kwi-Sung Yoo

Wun-Ki Jung

Min-ho Kwon

Dong-Hun Lee

Jin-Ho Seo

Gunhee Han

Shigenobu Maeda

Choong-Ho Lee

Hyun-pil Noh

Won-Ho Choi

Yu-Jin Park

Jae-Hong Kim

Jeong-Hwan Lee

Tae-Chan Kim

Dong-Soo Kim

Yong Kyun Lim

Seung-hyun Lim

Kyoung-Min Koh

Youngcheol Chae

Yong-Suk Choi

Su-Hun Lim

Ju-Seop Park

Kyo-Jin Choo

Yong-in Han

Myoung-Su Lee

Byung-jo Kim

Kang-sun Lee

Ji-Hun Shin

Sung-Ho Suh

Seung-Hyun Lim

Byung-Chul Park

Jin-Kyeong Heo

Han-Kook Cho

Jeong-Jin Roh

Jae-Jin Yeo

Won-Baek Lee

Min-Ji Hwang

Ji-Min Cheon

A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times.

Line memory device and image sensor including the same

A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.

Digital double sampling method, a related CMOS image sensor, and a digital camera comprising CMOS image sensor

A method of binning pixels in an image sensor including: dividing a pixel array into a plurality of binning areas, wherein each binning area includes (2n)*(2n) pixels, wherein n is an integer equal to or greater than two; and generating binning pixel data in each of the binning areas, wherein the locations of the binning pixel data of each binning area are evenly distributed within the binning area.

Method of binning pixels in an image sensor and an image sensor for performing the same

Digital double sampling method, a related CMOS image sensor, and a digital camera comprising the CMOS image sensor

An image sensor includes a pixel array and an analog-to-digital (A/D) conversion unit. The pixel array generates an analog signal by sensing an incident light. The A/D conversion unit generates a digital signal in a first operation mode by performing a sigma-delta A/D conversion and a cyclic A/D conversion with respect to the analog signal and generates the digital signal in a second operation mode by performing a single-slope A/D conversion with respect to the analog signal. The image sensor provides a high-quality image in a still image photography mode and a dynamic image video mode.

Image sensor and computing system having the same

Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Semiconductor device and method of manufacturing the same

An image sensor includes a pixel array and a plurality of pairs of column lines. The pixel array includes a plurality of unit pixel areas arranged in a plurality of rows and columns. Each of the unit pixel areas includes a readout circuit connected to a corresponding pair of column lines, and first and second photo-electric conversion devices sharing the readout circuit. Each of the unit pixel areas is configured to output a first pixel signal corresponding to a photoelectron generated by the first photo-electric conversion device through the first column line, and to output a second pixel signal corresponding to a photoelectron generated by the second photo-electric conversion device through the second column line.

Unit pixels configured to output different pixel signals through different lines and image sensors including the same

A correlated double sampling (CDS) circuit included in an image sensor includes a sampling unit and a timing controlled band-limitation (TCBL) unit. The sampling unit is configured to generate an output signal by performing a CDS operation with respect to a reset component of an input signal and an image component of the input signal based on a ramp signal, the input signal being provided from a pixel array included in the image sensor. The TCBL unit is connected to the sampling unit, and is configured to remove noise from the output signal based on a timing control signal. The timing control signal is activated during a first comparison duration, in which a first comparison operation is performed with respect to the ramp signal and the reset component of the input signal, and during a second comparison duration, in which a second comparison operation is performed with respect to the ramp signal and the image component of the input signal.

Correlated double sampling circuit and image sensor including the same

An image sensor includes a reference voltage generation unit that generates a reference voltage that alternately decreases and increases at a constant rate in an operation mode of the image sensor to convert analog signals of detected incident light to a digital value using the reference voltage to determine an intensity of the incident light with high sensitivity and high signal-to-noise ratio.

Image sensor and camera system having the same

An image sensor includes a delta-sigma analog-to-digital converter (ADC) including a delta-sigma modulator (DSM) and a voltage adjusting circuit. The DSM is configured to perform delta-sigma modulation on an analog signal from a unit pixel. The delta-sigma ADC is configured to convert the analog signal to a digital signal. The voltage adjusting circuit includes a replica inverter having a same configuration as at least one inverter included in the DSM. The voltage adjusting circuit is configured to adjust a power supply voltage and an input voltage provided to the at least one inverter based on a current flowing in the replica inverter.

Image sensors and image processing systems

Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.

Pixel sensor array including comparator and image sensor including the same

A method for operating an image capture device having a sensor with an array of first and second pixels includes capturing an image a plurality of times with the second pixels to produce a corresponding second image signal, the second pixels being white pixels, capturing the image a single time with the first pixels to produce a corresponding first image signal, inputting selecting signals to the sensor via a row driver to obtain the first and second image signals from the first and second pixels, respectively, and converting the first and second image signals to respective digital values via an analog-to-digital converter.

Image capture device and method of operating the same

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Suwon-si, South Korea

Seog-Heon Ham