Entegris, Inc.

Seobong Chang

Thomas H Baum

Bryan Clark Hendrix

Sungsil Cho

Jae Eon Park

Jaeeon Park

Sangbum Han

SangJin Lee

DaHye Kim

SooJin Lee

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co(CO)(RC≡CR), where Rand Rare different organic moieties and Ris more electronegative or more electron withdrawing compared to R.

Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt

Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

Precursors and methods for preparing silicon-containing films

Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with Oplasma.

Method for forming carbon rich silicon-containing films

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co(CO)(RC&#x2261;CR), where Rand Rare different organic moieties and Ris more electronegative or more electron withdrawing compared to R.

Growing community of inventors

Suwon, South Korea

Seobong Chang