Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Rnl Bio Co., Ltd.

Seob Shin

Jong-Heon Han

Jae-Kyoung Kim

Yeong-Koo Kim

Jeong Chan Ra

Sung Keun Kang

Sung-Il Lee

Sang Kyu Woo

A gate drive circuit includes a plurality of stages connected one after another to each other. Each of the stages includes a charging section, a driving section, a discharging section, a holding section and a holding control section. The driving section pulls up a high level of a first clock signal to output a gate signal. The discharging section discharges a voltage potential of a first node to a first off-voltage. The holding section holds a voltage potential of the first node to the first off-voltage. The holding control section receives the first clock signal and a second clock signal. The holding control section holds a voltage potential of the holding section to a second off-voltage through a second node in accordance with the second clock signal to prevent floating of the holding section.

Gate drive circuit and display apparatus having the same

A gates-line driving circuit of a display device includes a plurality of stages that are serially connected to each other, where each stage includes a plurality of transistors and a plurality of capacitors and receives a scanning start signal, a plurality of clock signals, and first and second gate-off voltages Voffand Voffof different magnitudes, where some of the transistors are turned off with the first gate-off voltage, and others of the transistors are turned off with the second gate-off voltage.

Low-leakage gate lines driving circuit for display device

A display device, includes: a plurality of thin film transistors which comprise a gate electrode, a source electrode and a drain electrode; a plurality of pixel electrodes which are respectively connected to the drain electrode of the thin film transistors; a plurality of gate lines which are respectively disposed to the opposite edge parts of the pixel electrodes in a lengthwise direction of the pixel electrodes, and connected to the gate electrode of the thin film transistors; and a plurality of data lines which are respectively disposed to a single edge part of the pixel electrodes in a widthwise direction of the pixel electrodes, and connected to the source electrode of the thin film transistors, a pair of pixel electrodes adjoining each other to interpose the single data line therebetween, and a pair of thin film transistors which are respectively connected to the pair of pixel electrodes being connected with the same single data line.

Display device and driving method therefor

The present invention relates to a method for isolating and culturing adult stem cells derived from human amniotic membrane in high yield, and more particularly to a method for obtaining a large amount of adult stem cells, the method comprising obtaining amniotic epithelial cells from human amniotic tissue in high yield by treatment with dithiothreitol (DTT) and a low concentration of trypsin and culturing the amniotic epithelial cells in a medium containing a Rho-associated kinase inhibitor. The human amniotic epithelial cell-derived stem cells are easily extracted compared to existing therapeutic stem cells such as umbilical cord blood stem cells and bone marrow stem cells, the yield and proliferation thereof are significantly increased by DTT treatment, the addition of the ROCK inhibitor or the replacement of medium. Thus, the method can be used to efficiently prepare adult stem cells.

Growing community of inventors

Seoul, South Korea

Seob Shin