Skhynix Inc.

Sejong University

Seo Woo Nam

Deok-kee Kim

Jae Hong Kim

Honggyun Kim

An e-fuse for a semiconductor device includes first and second electrodes; a gate metal electrically coupling the first and second electrodes with each other; a semiconductor layer formed under the gate metal, and forming a capacitor together with the gate metal; and a first oxide layer formed under the gate metal and on both sides of the semiconductor layer.

E-fuse for use in semiconductor device

An e-fuse for use in a semiconductor device includes first and second electrodes; a gate metal coupling the first and second electrodes with each other; a first oxide layer formed under the gate metal; and a gate oxide layer formed between a bottom end of the gate metal and a top end of the first oxide layer.

A fuse of a semiconductor device may include: a fuse link suitable for extending in a first direction and connecting first and second electrodes; a dummy strip suitable for extending in the first direction, and with a predetermined distance from the fuse link in a second direction perpendicular to the first direction; and an air channel formed between the fuse link and the dummy strip to contact with the fuse link.

Fuse of semiconductor device and method for forming the same

An anti-fuse for a semiconductor device includes an electrode; a gate metal formed to extend from the electrode; a gate oxide layer formed under the gate metal; a semiconductor layer formed under the gate oxide layer to overlap with a center portion of the gate metal; and a first oxide layer formed under the gate metal and the gate oxide layer and on both sides of the semiconductor layer.

Growing community of inventors

Gyeonggi-do, South Korea

Seo Woo Nam