Hynix Semiconductor Inc.

Skhynix Inc.

Seo Min Kim

Chang Moon Lim

Jin Soo Kim

Yong Dae Kim

Tae Joong Ha

In Hwan Lee

Yoon Suk Hyun

Sun Young Koo

Mi Jeong Lim

Byung Hoon Lee

A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

Reflective mask and method of fabricating the same

An exposure mask for forming a G-type active region with a double patterning technology includes a bar shaped first light-blocking pattern to define an I-type active region, and an island shaped second light-blocking pattern to define a bit line contact region. The first light-blocking pattern and the second light-blocking pattern are arranged alternately.

Exposure mask with double patterning technology and method for fabricating semiconductor device using the same

A method for forming a pattern in a semiconductor device includes performing a double exposure process for a multifunctional hard mask layer over a semiconductor substrate using a line/space mask to form a multifunctional hard mask layer pattern having a first contact hole region. The multifunctional hard mask layer pattern is subjected to a resist flow process to form a multifunctional hard mask layer pattern having a second contact hole region with rounded edges, where the size of the second contact hole region is smaller than that of the first contact hole region.

Semiconductor device and method for forming a pattern in the same with double exposure technology

A method for forming a semiconductor device includes forming a bit line contact region with a line pattern and then performing a process to form a bit line so that a multi-layered bit line contact is expended, thereby preventing a short between bit line contact plugs and improving the process margin of semiconductor devices and the reliability of semiconductor devices.

Method for manufacturing semiconductor device

A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.

Method of forming pattern of semiconductor device

A phase shift mask, comprising a transparent substrate having a trench-type guard ring pattern for shifting the phase of light transmitted therethrough by 180&#xb0;; and a half-tone phase shift pattern disposed on the transparent substrate and surrounded by the guard ring pattern is disclosed.

Growing community of inventors

Seoul, South Korea

Seo Min Kim